In-Grain Ferroelectric Switching in Sub-5 nm Thin Al_0.74 Sc_0.26 N Films at 1 V.

ABSTRACT: Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub-5 nm thin Al_0.74 Sc_0.26 N films grown on Pt/Ti/SiO₂ /Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, the study focuses on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al_1-x Sc_x N films on epitaxial templa

SUBMITTER: Schonweger G 

PROVIDER: S-EPMC10477852 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature