An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film Transistors.

ABSTRACT: We report the experimental realization of piezoelectric ZnO dual-gate thin film transistors (TFTs) as highly sensitive force sensors and discuss the physical origins of its electrically tunable piezoelectric response using a simple analytical model. A dual gate TFT is fabricated on a polyimide substrate using radio-frequency (RF) magnetron sputtering of piezoelectric ZnO thin film as a channel. The ZnO TFTs exhibited a field effect mobility of ~ 5 cm²/Vs, I _max to I _min ratio of 10⁷, and a subthreshold slope of 700 mV/dec. Notably, the TFT exhibited static and transient current changes under external force stimuli, with varying amplitude and polarity for different gate bias regimes. To understand the current modulation

SUBMITTER: Oh H 

PROVIDER: S-EPMC8409743 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature