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Influence of SiO₂ or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.

ABSTRACT: The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (^0.5%G) is studied. Devices composed of monolayer ^0.5%G, partially deposited on SiO₂ and h-BN were used for transport measurements. We find that the ^0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO₂ for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

SUBMITTER: Wang Z

PROVIDER: S-EPMC9075750 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature

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Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.

Wang Zhenping Z Yao Qirong Q Hu Yalei Y Li Chuan C Hußmann Marleen M Weintrub Ben B Kirchhof Jan N JN Bolotin Kirill K Taniguchi Takashi T Watanabe Kenji K Eigler Siegfried S

RSC advances 20191121 65

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause sc ...[more]

PMID: 35541787

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