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Mixed-Substituted Single-Source Precursors for Si_1-xGe_x Thin Film Deposition.

ABSTRACT: A series of new mixed-substituted heteronuclear precursors with preformed Si-Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule-material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si_1-xGe_x coatings. Moreover, partial crystallization of the Si_1-xGe_x has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys.

SUBMITTER: Kostler B

PROVIDER: S-EPMC9627566 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature

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Mixed-Substituted Single-Source Precursors for Si1-xGex Thin Film Deposition.

Köstler Benedikt B Jungwirth Felix F Achenbach Luisa L Sistani Masiar M Bolte Michael M Lerner Hans-Wolfram HW Albert Philipp P Wagner Matthias M Barth Sven S

Inorganic chemistry 20221019 43

A series of new mixed-substituted heteronuclear precursors with preformed Si-Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule-material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical ...[more]

PMID: 36260357

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